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Dr. Fedorov’s Homepage |
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Department of Physics |
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Dr. Vladimir Fedorov Research Associate Professor |
Education M.S.,
Moscow Institute for Physics and Technology, Moscow, Russia Ph.D,
General Physics Institute, Russian Academy of Science, Moscow Russia Fields of Interest Research interests include coherent and laser spectroscopy of doped solids; nonlinear optics; color center physics; and solid state lasers. During the last years major research was focused on study of laser material based on semiconductor doped by transition metals impurities. With colleagues, I received ”Snell Premium” of the Institute of Electrical Engineers of the United Kingdom in 2004 for the input in optoelectronics and development of mid-IR external cavity and microchip lasers. 5 most cited
publications from Scopus database (04/17/2024) 1. S. Mirov, V. Fedorov, I. S.
Moskalev, D. Martyshkin, C. Kim, “Progress in Cr2+ and Fe2+
doped mid-IR laser materials” Laser & Photon. Rev., vol. 4(1), pp.
21–41, (2010). (cited by 245) 2. Mirov, S.B., Fedorov, V.V., Martyshkin, D.,
Moskalev, I.S., Mirov, M., Vasilyev, S., "Progress in Mid-IR Lasers
Based on Cr and Fe-Doped II-VI Chalcogenides" IEEE Selected Topics in of Quantum Electronics (Invited paper), vol 21, Issue 1, 2015,
##6879250 (2015) (cited by 357) 3. V.V. Fedorov, S.B.
Mirov, A. Gallian, D.V. Badikov, M.P. Frolov, Yu.V. Korostelin, V.I.
Kozlovsky, A.I. Landman, Yu.P. Podmar’kov, V.A. Akimov, A.A. Voronov
“3.77–5.05-mm Tunable Solid-State
Lasers Based on Fe2+-Doped ZnSe Crystals Operating at Low and Room
Temperatures”, IEEE Journal of
Quantum Electronics, vol. 42(9), pp.
907-917, (2006). (cited by 235) 4. J.
Kernal, V. V. Fedorov, A. Gallian, S. B. Mirov, V. V. Badikov,”3.9-4.8
µm gain-switched lasing of Fe:ZnSe at room temperature”, Optics
Express,
vol. 13(26), pp. 10608 – 10615, (2005) (cited by 168) 5. Sergey
Mirov, Igor Moskalev, Sergey Vasilyev, Viktor Smolski, Vladimir Fedorov,
Dmitry Martyshkin, Jeremy Peppers, Mike Mirov, Alex Dergachev, and Valentin
Gapontsev, "Frontiers of mid-IR lasers based on transition metal doped
chalcogenides," in IEEE Journal of
Selected Topics in Quantum Electronics, vol. PP,
no. 99, pp. 1-1.(2018). (cited by 231) |
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Mailing address: |
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University of Alabama at Birmingham ESH 4100, 1720 2nd Ave.
South Birmingham AL 35294-1170 Author ID: https://orcid.org/0000-0003-3432-8680 Mid-IR Solid-State Lasers: (Technical Group) https://www.linkedin.com/groups/14274401/ |
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Fax:
(205)-934-8042 |
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